Abstract
Influence of impurities of In, Te and Ge on the core level binding energies and the electronic structure of the valence band of Sn2P2S6 ferroelectric crystals was investigated by X-ray photoelectron spectroscopy together with electron spectra first-principles calculations. It was found that the indium impurity induces donor states, the tellurium impurity modifies energy structure near the top of valence band, and germanium impurity improves stereoactivity of the cation sublattice that is related to the ferroelectric phase transition nature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
