Abstract
Joint use of XPS and STS methods for MoS x van der Waals face cleaned by removal of a few layers in air have allowed to determine the connection between change of electronic properties and variation in Mo content for MoS x surface layers. STS results (I–V curves with electron transport across MoS x layers) show the p-type conductivity for MoS 2; p- and n- regions for MoS 1.6. The surface state density is higher for p- MoS 1.6 than for p-MoS 2. From I–V curve with electron transport along layers for MoS 1.6 surface the bandgap above 1.1 eV and |E f - E c|≌ 0.4 eV are determined. For results explanation we assume that: surface states creation occurs due to top layer defects formation under top layer breaks ; n- type regions creation is caused by growth of concentration of donor centers associated with excess Mo atoms.
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