Abstract
The effect of low energy nitrogen and argon ion beam etching on the surface of CuInSe2 single crystals and CuGaSe2 thin films was investigated by (XPS) X-ray photoelectron spectroscopy and Raman measurements. After the removal of the oxidized and contaminated layer the ion-etched surface exhibits an enrichment of In(CuInSe2) or Ga(CuGaSe2). The argon etching results in metallic In(Ga) at the surface due to preferential sputtering. In contrast, the formation of a thin protective InN(GaN) layer on the top of the as-grown material has been observed after reactive nitrogen etching.
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