Formation of Carbon Nitride Films by Nitrogen Ion Bombardment on C60 Films

Abstract

The synthesis of covalent carbon nitride films becomes an important subject in the materials research field. As a new synthetic method two low-energy (400 and 1000 eV) nitrogen ion beams are used to bombard on C60 thin films individually. The bombarded films are used for Raman and x-ray photoelectron spectroscopy (XPS) measurements. The results of the analyses show that under the bombardment of 400 eV nitrogen ion beam, the film still contains a large amount of undestructed C60 molecules. In the case of 1000 eV bombardment, only a little amount of C60 molecules is kept undestructed. The experimental results also show that the destructed carbon species will combine chemically with nitrogen ions to form stable covalent carbon nitride, confirmed by the Raman peaks of, e.g., 2240 cm-1. The XPS N1s and C1s lines also indicate the formation of covalent carbon nitride in the bombarded films.