Abstract
The laser-annealing effects on 1000 Å thick SiO2 layers deposited by APCVD (Atmosphere Pressure Chemical Vapor Deposition) in a-Si/SiO2 and SiO2/a-Si structures were investigated. In both structures, the permeation of Si and H atoms into SiO2 layer was observed, which may resulted in the degradation of breakdown field of SiO2 layer. The pre-breakdown field of SiO2 in SiO2/a-Si structure was deteriorated considerably from 3.8 MV/cm to 2.3 MV/cm at the 300 mJ/cm2 of laser energy density, and the breakdown occurred at 2.2 MV/cm while the breakdown field slightly changed in a-Si/SiO2 structures.
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