Abstract
The perturbed angular correlation method (PAC) was applied to investigate, on a microscopic scale, the mixing effects when irradiating Sb/Ni bilayers with 350 keV Xe ions. Marker layers of 111In probe atoms were deposited at different positions relative to the interface inside the Ni or Sb film, or exactly at the interface. The formation of Ni–Sb phases, caused by ion beam mixing, was investigated. The results are compared with those obtained by thermal mixing and when implanting Ni ions into Sb or vice versa.
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