X-band receiver module in fully depleted silicon on insulator technology

Abstract

This paper reports on the successful demonstration of radio frequency (RF) components in support of an integrated wide band/high dynamic range X-band receiver in 180-nm fully-depleted (FD) SOI CMOS technology. The demonstrated microwave monolithic integrated circuit (MMIC) includes an X-band low noise amplifier (LNA), Marchand balun, balanced amplifiers, double balanced mixer, non-reflective filter, and an IF amplifier. The X-band receiver front end module yielded a gain of 13.5–15 dB, 5.2–5.8 dB noise figure (NF), across the frequency band (3.7–4.3 GHz).