X-Band Receiver Front-End Chip in Silicon Germanium Technology

T K Quach,C A Bryant,P L Orlando,L M Johnson,V J Patel,T L James,B K Kormanyos,A G Mattamana,R G Drangmeister,R K Bonebright,K S Groves,G L Creech

doi:10.1109/smic.2008.11

X-Band Receiver Front-End Chip in Silicon Germanium Technology

T K Quach, C A Bryant + Show 10 more

https://doi.org/10.1109/smic.2008.11

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Publication Date: Jan 1, 2008

Citations: 9

Affiliation: United States Air Force Research Laboratory, MIT Lincoln Laboratory, Massachusetts Institute of Technology, Boeing (United States)

#Silicon Germanium Technology #Intermediate Frequency Amplifier + Show 8 more

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Abstract

This paper reports a demonstration of X-band receiver RF front-end components and the integrated chipset implemented in 0.18 mum silicon germanium (SiGe) technology. The system architecture consists of a single down conversion from X-band at the input to S-band at the intermediate frequency (IF) output. The microwave monolithic integrated circuit (MMIC) includes an X-band low noise amplifier, lead-lag splitter, balanced amplifiers, double balanced mixer, absorptive filter, and an IF amplifier. The integrated chip achieved greater than 30 dB of gain and less than 6 dB of noise figure.

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