Abstract
Thin polycrystalline SiC films grown on Si(111) at 830 degrees C using solid state evaporation were characterized by X-ray diffraction, transmission electron microscopy and atomic force microscopy. The thin-film crystallites have a preferred growth orientation azimuthal and nearly perpendicular to the substrate surface. The orientation distribution function was characterized to be Gaussian with full width at half maximum of 2.5 degrees . The size of crystallites normal to the surface (the length of columns) is of the order of the thin film thickness, whilst the size parallel to the surface is in the range 20-70 nm.
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