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https://doi.org/10.1049/el:19941392
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Cite Journal: Electronics Letters |  Publication Date: Nov 24, 1994 |
 Citations: 6 |
Affiliation: Etegent Technologies (United States)
X-ray data are presented on high crystalline quality GaN grown on basal plane (0001) sapphire by MOCVD. An X-ray rocking curve displaying Pendellosung fringes and having an FWHM of 27 s-1 is reported for a 0.7 µm thick film. Reciprocal space mapping of the (0002) GaN reflection is presented.
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