Abstract
Stresses in semiconductor silicon chips were measured by an X-ray stress measurement method that is applicable to microareas (60 µ m dia.) of single crystals. The measurement was conducted before and after silicon chip mounting on a substrate. Also measured were residual stresses in areas around bumps. As a result, about +30 to +40 MPa tensile stresses were determined at the corners of the rear side of a test piece silicon chip, which was fixed with resin, and about +70 to +80 MPa tensile stresses were found near the solder-bump formed surface of another test piece silicon chip.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
