Abstract
A ZrO2∕TiO2∕Si gate stack has been prepared by using solid phase reaction between sputtered ZrO2∕Ti stack and underlying SiO2∕Si substrate through in situ vacuum annealing. X-ray photoelectron spectroscopy was used to analyze interfacial properties of the ZrO2∕TiO2∕Si stack after annealing at high temperatures. The interfacial silicate is composed of Ti silicate and ZrO2 layer does not take part in the interfacial reaction to form Zr silicate. Such a stack has the advantage of combining high dielectric constant of ZrO2 and excellent interfacial property of Ti silicate/Si interface, and will have potential applications in the advanced metal-oxide-semiconductor devices.
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