Abstract
The initial stages of oxide growth on Al and Si are studied by X-ray photoelectron spectroscopy and X-ray-induced Auger electron spectroscopy methods. The change from initial Si-O and Al-O bonding through interface layer formation to SiO 2 and Al 2O 3 oxide growth are characterized in terms of charge transfer, relaxation energy and particular bonding together with oxide Fermi level shifts. The relation between the Auger parameter and hole localization or extra-atomic relaxation energies is discussed, taking into account the influence of excessive oxygen atoms presented in the oxide layer. The advantages of using these substrates for the preparation of a model catalyst and for investigating the metal-oxide support interaction are discussed. While the diffusion of deposited metal prevails for oxide thickness up to 1.2 nm, charge transfer and tunneling processes dominate in the interaction of metal deposited on thicker oxide interlayers.
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