Abstract
Abstract Valence-band offsets ΔEv have been evaluated from an X-ray photoelectron spectroscopy (XPS) study of heterojunctions of a-Si0·2C0·8:H/p-(a-Si:H) and a-Si0·2C0·8:H/n-(a-Si:H). The values of ΔEv for a-Si0·2C0·8:H/p-(a-Si:H) heterojunctions are estimated to range from 1·2 ± 0·05 to 1·5 ± 005 eV depending on the amounts of dopant in the a-Si:H. For a-Si0·2C0·8:H/n-(a-Si:H), ΔEv is 0·7 ±005eV. The origin of the difference in the values for different types and levels of doping in a-Si: H is discussed. Reported electron transport properties are discussed using the band structure at the hetero-interfaces obtained from the present XPS study.
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