X-ray photoelectron spectroscopy of polycrystalline AlN surface exposed to the reactive environment of XeF 2

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X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and scanning electron microscopy (SEM) measurements of polycrystalline AlN surfaces exposed to XeF 2 vapor at 1.8×10 −4 Torr at sample temperatures ranging from T s=300 to 920 K are reported. No change in the chemical composition and morphology of the AlN surface exposed at T s=300 K was observed from a virgin AlN surface. The AlN surface exposed at T s=700 K is partially fluorinated, forming an AlF 3 layer, whereas those exposed at T s=750 and 800 K are found to be completely covered with an AlF 3 layer although no change was observed in morphology. Above T s=850 K, however, partially fluorinated AlF x ( x=1, 2) species and exposed AlN surface area were observed but no AlF 3-passivated layer was detected, probably because the AlF 3 formed is desorbed as soon as it forms. Therefore, it is concluded that, above T s=850 K, the fast corrosion reaction of AlN by XeF 2 proceeds and thus the AlN surface is strongly etched.