X-ray photoelectron diffraction (XPED) patterns from: III-V compound mixed crystals (Ga 1-xAl xAs AND GaAs 1-yP y). Comparison of experiment and single scattering calculations

Abstract

X-ray photoelectron diffraction (XPED) measurements, together with single scattering calculations, were made for two III—V group compound semiconductor mixed crystals (Ga 1- x Al x As(110) and GaAs 1- y P y (001)). Each pair of photoelectrons excited at equivalent atomic sites in the crystal (Ga 3 d and Al 2 p in Ga 1- xAl x As, and As 3 d and P 2 p in GaAs 1- yP y ) showed essentially the same XPED patterns. Single scattering calculations reproduced the observed XPED patterns fairly well. An obvious site dependence of XPED patterns was observed in both the experimental and calculated results. These results clearly show that, for a given kinetic energy, XPED patterns mainly depend on the site of emitter atoms in the crystal, not on the species of emitter atoms. Thus, XPED measurements can be used for crystal site determinations in a fingerprint manner.