Abstract
Nanocrystalline Ga0.62In0.38Sb particles embedded in SiO2 matrix were grown by radio frequency (RF) magnetron co-sputtering. X-ray diffraction (XRD) patterns and X-ray photoelectron spectroscopy (XPS) strongly support the existence of separated nanocrystalline Ga0.62In0.38Sb material in a SiO2 matrix. XPS core level data also reveal that there exists a SiO2 layer with a 1.1 eV chemical shift compared to that of pure SiO2, indicating that the SiO2 chemically adheres to the Ga0.62In0.38Sb. Room temperature Raman spectrum shows that the Raman peaks of Ga0.62In0.38Sb–SiO2 composite film have a larger red shift of 95.3 cm−1 (LO) and 120.1 cm−1 (TO) than those of bulk GaSb, suggesting the existence of phonon confinement and tensile stress effects.
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