X-ray peak profile analysis of Sb2O3-doped ZnO nanocomposite semiconductor

Abstract

In the present work, nanostructured ZnO doped with (2, 4, 6, 8 and 10 ) is prepared by conventional solid state reaction method. X-ray diffraction peak intensities are sharp and narrow, confirming that the sample is of high quality with good crystallinity. The intensity and full width at half-maximum of x-ray diffraction peaks of (100) and (101) decreases with the increase of dopant in ZnO. X-ray peak profile analysis was used to evaluate the crystallite size and lattice strain by the Williamson-Hall (W-H) method. Using the models namely uniform deformation model (UDM), uniform stress deformation model (USDM) and uniform deformation energy density model (UDEDM) of W-H method, the physical parameters such as strain, stress, and energy density values were calculated. The surface morphology and elemental composition of the samples were characterized by scanning electron microscope and energy dispersive spectroscopy.