Abstract
Alpha alumina whiskers grown by the vapor reaction 2A1 + 3H2O° Al2O3+ 3H2 were examined by X‐ray microtopography. Topographs of whiskers PO to 60 μm in diameter were taken by (1120) and (00012) diffraction; most a and c whiskers (growth direction 〈1120〉 and 〈0001〉, respectively) were free from dislocations. Chemical etching of a whisker cross section with orthophosphoric acid or potassium bisulfate did not produce etch pits. Growth of alumina whiskers through axial dislocation appears improbable.
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Schedule a callMore From: Journal of the American Ceramic Society. American Ceramic Society
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