Abstract
The aim of this work was the experimentalcharacterization of edge effects in active-edge silicon pixel sensors, inthe frame of X-ray pixel detectors developments for synchrotron experiments.We produced a set of active edge pixel sensors with 300 to 500 μmthickness, edge widths ranging from 100 μm to 150 μm, and n or ppixel contact types. The sensors with 256 × 256 pixels and 55 × 55 μm2 pixel pitch were then bump-bonded to Timepix readout chips for X-ray imagingmeasurements. The reduced edge widths makes the edge pixels more sensitiveto the electrical field distribution at the sensor boundaries. Wecharacterized this effect by mapping the spatial response of the sensoredges with a finely focused X-ray synchrotron beam. One of the samplesshowed a distortion-free response on all four edges, whereas others showedvariable degrees of distortions extending at maximum to 300 micron from thesensor edge. An application of active edge pixel sensors to coherentdiffraction imaging with synchrotron beams is described.
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