Abstract
The history of the development of ultrasoft X-ray emission depth-resolved spectroscopy is briefly reviewed. The results of the investigation of new model nanostructured materials (metal aluminum layers synthesized by atomic layer deposition on the surface of crystalline silicon and coated by an amorphous silicon layer) are reported. The thicknesses of the Al and amorphous Si layers were identical (10 and 50 nm, respectively). The three-level method of analysis of the results of measuring the shape and relative intensity of Al L2,3 and Si L2,3 X-ray emission spectra as functions of the energy of exciting electrons is described in detail. Applicability of the Borovsky-Rydnik model to description of the dependence of the intensity of ultrasoft characteristic emission bands in complex nanoscale heterostructures is demonstrated. The method developed has been proven to be efficient for studying the depth profiles of not only the phase chemical composition but also structural modifications of silicon.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
