Abstract
Silicon carbide crystallizes into several structural modifications whose c-periodicities vary from 1 nm to more than 100 nm. Its high period structures are found to consist of intergrowth of smaller period structures at the unit cell level. The X-ray diffraction studies show that SiC crystals often possess one-dimensional disorder which is characterized by continuous streaks in X-ray diffraction patterns along ho.1 reciprocal lattice rows. However, it is shown that these streaks can also arise as a result of extremely high c-periodicities of the crystals as their ho.1 spots cannot be resolved easily. This contribution reports the observation of only few representative cases of so-called one-dimensional disordered crystals as observed in their X-ray and electron diffractions with lattice imaging.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Proceedings, annual meeting, Electron Microscopy Society of America
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
