Abstract
Abstract Semi-insulating GaAs is suitable as detector for X-rays and particles. Compared to silicon, charge carriers in GaAs have less effective mass, so they gain a higher acceleration. The detectors operate as Schottky diodes. Design and processing were carried out at the IAF in Freiburg. The layout contains quadratic diodes of various sizes (2×2 mm2, 3×3 mm2, etc.) and also microstrip detectors. Test measurements were made with α-, β- and γ-rays. For the first time X-rays down to 20 keV have been observed with room temperature GaAs. With γ-radiation of 57Co, 122 keV, an energy resolution of 18% FWHM was obtained. It is planned to integrate signal processing fast electronics on the same wafer. Also discussed is a data transfer by optoelectronical means, as for example laser diodes and MSM photodiodes.
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