Abstract
We present the studies on the correlation between the structural parameters of the well and the barrier in Si 1−x Ge x/ Si quantum well superlattices by using X-ray grazing incidence diffraction (GID) under total external reflection conditions and the conventional X-ray double-crystal diffraction. Both the coherent growth and the partial relaxed growth in the interfaces between the two components of the superlattices were found by the GID technique. The GID technique gave the valuable information that the relaxation occurs in the interfaces between the two components of the superlattices which cannot be distinguished by other analytical tools. This shows the potential of the depth-controlled analysis for superlattices by the GID technique.
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