Abstract
A new scheme for x-ray grazing incidence diffraction (GID) under total external reflection conditions is presented. This simple scheme allows the grazing angles and the scattering angles to be adjusted independently so that the structural and/or the chemical profiles of materials can be determined at controlled depths. As an example, Si1−xGex/Si superlattice materials were studied. Both commensurate and incommensurate growths between the two quantum wells in the strained-layer superlattice were observed by the GID technique.
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