Abstract
We have investigated the X-ray absorption fine structures (XAFS) of several ruthenium-silicon intermetallic compounds at the Ru L2,3, Ru K and Si K-edges. From the analysis of the Ru and Si K-edge XANES (X-Ray Absorption Near Edge Structures), particularly the relative intensity of the absorption feature just above the threshold, we found that ruthenium gains p-like electrons upon dilution in silicon. Likewise, compound formation of silicon with ruthenium results in the increase of p-like electrons at the silicon site. The Ru L2,3-edge also exhibits variation in the whiteline intensity for ruthenium silicide of different composition. This is used to infer d charge redistribution at the Ru site upon the formation of Ru-Si intermetallic compounds. The implications of the results are discussed.
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