Abstract
An X-band MMIC power amplifier for radar application is developed using 0.25-㎛ gate length GaAs pHEMT technology. A bus-bar power combiner at output stage is used to minimize the combiner size and to simplify bias network. The fabricated power amplifier shows 38.75 ㏈m (7.5 Watt) Psat at 10 ㎓. The chip size is 3.5 ㎜ × 3.9 ㎜.
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