Abstract
Wurtzite ZnSe nanowires were prepared on GaAs substrates in a metal-organic chemicalvapour deposition system. Electron microscopy shows that they are smooth and uniformin size. Both transmission electron microscopy and x-ray diffraction reveal thewurtzite structure of the nanowires, which grows along the direction. Raman scattering studies on individual nanowires were performed in theback-scattering geometry at room temperature. Besides the commonly observedlongitudinal and transverse optical phonon modes, a possible surface mode located at233 cm−1 is also observed in the Raman spectrum. A peak located at 2.841 eV was clearly observed inthe photoluminescence spectra of the nanowires, which can be assigned to near band edgeemissions of wurtzite ZnSe.
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