Abstract
The energy splitting of fundamental localized transverse optical (TO1) phonon modes in GaAs/AlAs superlattices and quantum wires grown by molecular-beam epitaxy on a faceted (311)A GaAs surface is observed by Raman spectroscopy. The form of the Raman scattering tensor makes it possible to observe the TOx and TOy modes separately, using different scattering geometries the y and x axes are the directions of displacement of the atoms and are directed parallel and transverse to the facets on the (311)A surface). Enhancement of the splitting of the TO1x and TO1y modes is observed as the average thickness of the GaAs layers is decreased from 21 to 8.5 A. The splitting is probably due to the effect of the corrugation of the GaAs/AlAs (311)A hetero-interface on the properties of localized phonon modes.
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