Abstract
Transition metal dichalcogenide (TMDC) materials are in the spotlight as next-generation semiconductor materials because of their advantages over other semiconductor materials. Research on WSe2 among the materials is underway, and the feature of WSe2 has an ambipolar characteristic, and the fermi level change and the doping effect are different according to the electrode type.In the present study, we have fabricated a homogeneous WSe2 PIN junction diode. Our in-plane multilayer WSe2 p-i-n homogeneous diode exhibited photovoltaic properties by asymmetric physical contact doping effect with electric double layer(EDL). Owing to the EDL placed between the cathode and anode, local charge carrier type and density profile are modulated in the same layers.Compared to general diode mode, PIN mode enhance the photo response of the device in our visible measurement range. The diode exhibits excellent rectifying behavior with a current rectification ratio of 104 or higher. Photovoltaic performance of short circuit current and open circuit voltage achieved 3.2 nA, 0.55 V, respectively under the 550 nm green light. And spectrum responsivity is about ~100 mA/W (max point) at 3.2 eV to 1.6 eV. Figure 1
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