Year-end Sale % OFF 
Abstract
Atomically thin two-dimensional materials including graphene, transition metal dichalcogenides, black phosphorus and so forth have been considered as promising channel medias for electronic and optoelectronic devices in the past few years. However, the poor photoresponse time and the large dark current are the two major issues which greatly block their applications. Here, we report a vertical Au–WSe2–ITO (indium tin oxide) Schottky junction photodetector with a broadband photoresponse from 550–950 nm and a stable photovoltaic responsivity of ∼0.1 A W−1. The fast photoresponse of ∼50 μs and low dark current of ∼1 pA are achieved at the vertical Au–WSe2–ITO photodetector. These results indicate that metal contact to a 2D material-based vertical Schottky junction can achieve an excellent photoelectric response.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
