Abstract
The size of the write windows for ultrafast magnetic random access memory (MRAM) write operation based on ballistic bit addressing (BBA) is studied. During BBA the magnetization of a bit which is to be reversed undergoes a half precessional turn, whereas a bit which is not to be reversed undergoes a full precessional turn. After BBA pulse application the residual demagnetizing energy of the magnetic bit is low and magnetization ringing is suppressed. By single-spin simulations of the magnetization dynamics of an MRAM cell quasi-static and dynamic switching asteroids and maps of the residual energy after bit addressing are calculated. The results show a sufficient write margin allowing low-ringing ultrafast BBA MRAM write operation
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