Abstract

In this work a ringing free bit addressing scheme for magnetic random access memories (MRAM) is presented which allows MRAM operation with ultra high write rates above 1 GHz. The results are obtained using single spin simulations of the magnetization dynamics of an MRAM free layer during pulse application. Like in conventional MRAM bit addressing the switching of a selected cell is obtained by the superposition of two half-select field pulses. For ballistic bit addressing the pulses are tailored to obtain optimized trajectories both for the case of switching and non-swichting of the cell: (i) a cell which is selected for magnetization reversal switches ballistically by a half precessional turn of the magnetization; (ii) a cell which is exposed to a magnetic field pulse but which is not selected for switching undergoes a full precessional turn of the magnetization. In both cases the magnetization is near the equilibrium orientation along the easy axis upon pulse decay and ringing of the magnetization is suppressed.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.