Abstract
Abstract : A Workship on 'Epitaxy, Interfaces, Defects and Processing of Electronic and Photonic Materials' was held in Pittsburgh, 4-7 November 1991. The following three (3) topic areas were discussed in detail. Fundamental aspects of two- and three-dimensional epitaxial growth, especially during heteroepitaxy involving misfits, and generation of defects; Atomic structure of interfaces and defects; Growth and processing of electronic and photonic materials using novel concepts. Scientific issues were delineated and approaches or techniques to address these issues were also discussed in detail
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