Abstract
A modelization of the strain relaxation in single heteroepitaxial layers is presented in this letter. The calculations consider the energetic variations of the heteroepitaxial structure when introducing one new dislocation into the existing interfacial array of fixed misfit dislocations without continuous readjustment of the spacing array. The interaction energy of the new dislocation with both lattice mismatch and dislocation array is shown to be the limiting factor that controls the mechanism of strain relaxation at the saturation stage of relaxation. The model is shown to be in good agreement with the lattice relaxation behavior of previously published strain/thickness data.
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