Abstract
We introduce and calculate the work function ${\mathrm{\ensuremath{\Phi}}}_{2\mathrm{D}\mathrm{E}\mathrm{G}}$ of a 2-dimensional electron gas (2DEG). In contrast to the situation in 3D metals ${\mathrm{\ensuremath{\Phi}}}_{2\mathrm{D}\mathrm{E}\mathrm{G}}$ is determined by the image tail of the potential, which arises due to the screening by the free carriers in the 2DEG. The work function ${\mathrm{\ensuremath{\Phi}}}_{2\mathrm{D}\mathrm{E}\mathrm{G}}$ can be measured by the photoelectric effect in the far-infrared regime using existing experimental structures and techniques. Typical values for GaAs/AlGaAs heterojunctions are in the range ${\mathrm{\ensuremath{\Phi}}}_{2\mathrm{D}\mathrm{E}\mathrm{G}}$\ensuremath{\approxeq}1.5--2 meV.
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