Abstract
In order to achieve both interfacial oxide reduction and exible work function control by using a single gate electrode structure, we deposited Ni/Ti bi-layered metal electrodes with di erent Ti thicknesses on Hf-silicate lms and investigated their electrical properties. A relatively small reduction of the interfacial oxide thickness (by 0.5 nm) when using the reactive Ti electrode was observed, possibly due to the lower oxygen di usivity in the Hf-silicate lm than in HfO2. No interfacial reaction between Ni and Ti was observed after post-metallization heat treatments at temperatures up to 400 C. The atband voltage shift from a pure Ni to a pure Ti electrode happened below a thickness of 6 nm for Ti and a gradual change of the e ective work function by 0.6 eV was obtained by further decreasing the underlying Ti thickness.
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