Abstract
Dopingless devices have shown significant improvement over doped devices in terms of doping fluctuations and thermal dependency. In this paper we designed and simulated dopingless/charge plasma diodes where the diode action is implemented by creating a charge plasma under the metal contacts. Two different gate metals or metal silicides are chosen having a work function different from that of the underlying thin silicon body. The gates are separated by a dielectric layer. Several gate combinations are chosen for the diode and performance is evaluated under variation in different process parameters. Good rectifying properties are obtained along with thermal stability of the device. High ON current of 10−8 A μm−1 is obtained for a 20 nm thick device. The simulated results are compared with experimental data and show good agreement.
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