Woodpile photonic crystal fabricated in GaAs by two-directional etching method

Abstract

Three-dimensional woodpile photonic crystals for 1.55 μm telecommunication wavelength are fabricated in a GaAs wafer by the two-directional etching technique for the first time. Chlorine-based chemically assisted ion beam etching is used for deep anisotropic GaAs etching. High-precision woodpile photonic crystals with 150×150×2.25 unit cells are fabricated in a two-patterning process, which is applicable to the introduction of intentional photonic crystal disorders in epitaxially grown, active materials without wafer bonding process.