Abstract

With continuous downscaling of integrated circuits into deep submicron and nanometer regime, operating at high frequencies, it has become most important to evaluate the reliability and efficiency of on-chip interconnects. The study of device and dynamic variations on functional crosstalk in inductive coupled interconnect wires is discussed in this paper. It analyses and studies the effect of driver size and temperature on the coupled interconnect lines. In the analysis, single and cascaded repeaters are used to drive the coupled interconnect lines. The study reveals that the maximum positive forward crosstalk noise of the cascaded repeater driven interconnect is 33.61 percent smaller than the peak positive forward crosstalk noise of minimum sized single repeater driven interconnect. The variation in supply voltage and temperature impacts the propagation delay and power dissipation of coupled interconnects. It is observed that the propagation delay decreases, and power dissipation increases with increase in supply voltage. It is also evaluated that the propagation delay of the coupled interconnect increases with increase in temperature for the combined range of commercial and military applications ranging from −55 °C to 125 °C. The analysis is carried out using geometric dimensions and the impedance parameters of copper interconnect extracted from PTM models for 45 nm CMOS technology node.

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