WITHDRAWN: Design and implementation of CMOS transimpedance amplifier as a photodetector

Abstract

Radiation hard electronics, which are required for new fundamental science research, are important to provide reliable diagnostics for fast radiation detection. Transimpedance amplifiers are required in the case of radiation detection to increase low photodetector signals reliably to readable levels. This study explores a way of designing a CMOS transimpedance amplifier (TIA) as a front-end amplifier for the first stage. In fast-neutron scintillation experiments the TIA should be mounted on the silicon photomultiplier (SiPM), which carries up to 1015 n/cm of high-speed neutrons within 0.1–20 MeV. The proposed TIA was developed with “ON's C5 process” (a 600 nm CMOS process). It has a ~300 kΩ gain, bandwidth is at least 250 MHz, the noise is less than 5 pA/ /√Hz, and the output is 1.5–2 V and the power consumption is less than 25 mW. The TIA is expected to sustain reliable performance (<50%) up to a total integrated fluence of 1015 n/cm2. Neutron damage is mainly knock out atoms that cause cascades of displaced atoms and trap creation in SiO2 passivation layers and is not problematic as it is in ionizing radiation and not taken into account in this investigation. Therefore, a design of a transimpedance amplifier with the capacity to amplify low current from a SiPM, with a fast-transient response for single-photon detection and with high radiation hardness for reliable performance under fast neutron irradiation was designed and simulated.