Wigner Function RTD Simulations with DMS Barriers

H L Grubin

doi:10.1007/978-3-540-36588-4_28

Wigner Function RTD Simulations with DMS Barriers

H L Grubin

https://doi.org/10.1007/978-3-540-36588-4_28

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Publication Date: Jan 1, 2006

Citations: 6

Affiliation: University of Connecticut

#Dilute Magnetic Semiconductor #Dilute Magnetic Semiconductor Layer + Show 8 more

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Abstract

We present spin dependent Wigner function simulations of barrier devices containing dilute magnetic semiconductor (DMS) regions. Two situations are considered: the DMS layer transforms a single barrier structure into an effective two-barrier structure with NDC, and second the emitter and collector barriers both contain DMS layers. Transient behavior is also addressed.

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