Abstract
Stimulated Raman scattering is an effective means of wavelength conversion and can largely extend the operating spectral range of an optical source. We demonstrate a high-performance tunable Raman laser on a sub-micrometer-thick silicon on insulator wafer using a standard foundry process. The key feature to this laser is the use of a tunable coupling mechanism to adjust both pump and signal coupling coefficients in the ring cavity, allowing demonstration of laser emission over a large wavelength tuning range of 83 nm. This Raman laser demonstrates efficient (slope of up to 26% and a maximum pump-to-signal power conversion efficiency of 10%) on-chip nonlinear wavelength conversion. Our results indicate great promise for substantially increasing the optical spectral resources available on a silicon chip.
Highlights
Recent advances in silicon photonics (SiPh) have spurred interest for applications of photonic integrated circuits in a variety of fields
Experimental Results we present the experimentally measured performance of the SiPh tunable Raman laser fabricated at AMF in Singapore
3.1 Cavity characterization Given the variations expected in SiPh fabrication, we first validated the operation of the tunable coupler to be able to target specific power coupling ratios during the Raman laser optimization
Summary
Recent advances in silicon photonics (SiPh) have spurred interest for applications of photonic integrated circuits in a variety of fields. On-chip Raman lasers and amplifiers use simple cavity designs and have so far been achieved mostly with relatively thick silicon wafers [20,21]. The key feature of this laser is a tunable directional coupler that allows the optimization of both pump and signal coupling coefficient in the cavity Adjustment of these parameters is critical to achieve high performance over a wide wavelength range. This design is based on a comprehensive model and optimization method that we reported in [12] and the results demonstrate the interest of this design process to address the development of Raman lasers in other wavelength bands, such as the mid-infrared.
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