Abstract
This paper presents an 8 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sup> -order chebyshev active-RC analog baseband IC with tunable cut-off frequency from 500K to 16MHz and adjustable gain from 5.5dB to 70dB for a Software-Defined Radio (SDR) receiver. For the analog baseband, a highly power-efficient push-pull op-amp with two differential-to-single output stages is proposed, which is suitable for the advanced deep-submicron CMOS process. It achieves 45dB gain and 850MHz GBW with only 0.8mA current. I/Q analog baseband IC, consisting of filter, PGA/VGA, and DCOC, is integrated for a SDR receiver, which is fabricated in a standard 65nm CMOS technology. It consumes 9.2mA current from 1.2V power supply, achieves 17.44dBm in-band OIP3, 11.43nV/√Hz input-referred noise (IRN) density, and occupies 0.68mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> silicon area.
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