Abstract
The influence of the design of high-speed photodiodes for microwave photonics and signal transmission systems on the diode dark current is studied experimentally. It is shown that Schottky barrier photodiodes demonstrate the lowest dark currents, excelling photodiodes of the pin design. Photodiodes of 25 micron mesa diameter with the dark current average value as low as 0.4 mA have been manufactured. It is shown the dark current value is controlled by the mesa side wall leakage.
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