Wide dynamic range, 0.8 to 6 GHz LNA in 45 nm digital SOI CMOS

Abstract

We present a wide dynamic range, dual-mode low noise amplifier (LNA) operating in 0.8 to 6 GHz, which is suitable for a multi-band multi-standard front-end in a scaled CMOS technology and a low supply voltage operation. The digitally controlled high-sensitivity and high-linearity modes enable a low noise and a high linearity according to an input power to the LNA. In measurement, the LNA shows a power gain of 9.4 to 7.0 dB, a noise figure (NF) of 3.0 to 3.6 dB in high-sensitivity mode, and an input-referred 1-dB compression point (P1dB) of up to +4.2 dBm in high-linearity mode. The LNA draws 5.6 mA from a 1.1 V supply voltage in high-sensitivity mode and does not consume power in high-linearity mode. The design was implemented in 45 nm digital SOI CMOS technology.