Abstract
We have studied a suitable structure for 1200 V NPT-IGBTs from the viewpoint of total performance. We propose the wide cell pitch CSTBT (Carrier Stored Trench Bipolar Transistor) structure. As a result, small gate capacitance and short circuit ruggedness have been established by reducing MOS channel width. A small on-state voltage has been achieved by the carrier store effect of CSTBTs. To control the breakdown voltage and to suppress oscillation during short circuit operation, damping trench capacitors have been also prepared.
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