Abstract
Although Ge and Si are currently the major semiconductor materials for nuclear-radiation detectors used in high-resolution nuclear spectroscopy, and will remain so in the foreseeable future, their limitations that hamper their use in field and industrial environments have given the impetus for research into alternative semiconductors that would be suitable for wider areas of application and would operate at room temperature. Requirements are formulated for semiconductors in which to make room-temperature detectors of X- or gamma-rays. A brief overview is given of the work in Russia on such detectors using a wide-bandgap compound semiconductor, namely, CdTe, GaAs, HgI2, or TlBr. The standard of semiconductor-materials technology is shown to be a key factor in developing this type of detector.
Published Version
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