Abstract
Terahertz photoresponse of a GaAs/InGaAs transistor structure with large-area slit grating gate has been measured. Peaks in the photoresponse curve are assigned to plasmon resonances excited in the structure. More effective excitation of plasmon resonances is achieved in a grating gate structure with narrow slits, which increase the photoresponse amplitude by an order of magnitude.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.