Abstract
Aluminum plays a central role in the world of electronic oxide materials. Yet, aluminum sources are very difficult to handle during oxide molecular-beam epitaxy, the main reason for which is the high oxidization potential of aluminum. In this work, we present a thorough study of the behavior of aluminum sources during oxide thermal laser epitaxy. We identify two distinct operating regimes. At high laser-beam fluences, the source emanates reproducible fluxes independent of an applied oxygen pressure of <10−1 hPa. At lower beam fluences, the flux increases with increasing oxygen pressure (<10−1 hPa) due to suboxide formation. We demonstrate reproducible rate control over a flux range of 5 orders of magnitude, which can be expanded further. These results demonstrate that thermal laser epitaxy does not present the challenges associated with the evaporation of aluminum during oxide molecular-beam epitaxy.
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